Validation Analysis
Transmission electron microscope (TEM)
- Detailed description
- Case Study Sharing
- Scope of application
- Equipment Specifications
- TEM mode corresponding observation content
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- Commodity name: Transmission electron microscope (TEM)
The Thermo Fisher Scientific Talos F200E 200 kV field-emission S/TEM transmission electron microscope, equipped with a high-speed Super‑X energy-dispersive X-ray spectroscopy system, enables atomic‑scale morphological imaging and microarea elemental analysis. It is a powerful, highly integrated analytical TEM platform designed to deliver high‑resolution imaging and comprehensive compositional analysis for materials science, nanotechnology, and semiconductor research.
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High-Resolution TEM Image Analysis
Under optimal conditions, the Talos F200E achieves a TEM information limit of ≤0.12 nm, a line resolution of ≤0.1 nm, and a STEM resolution of ≤0.16 nm, enabling atomic‑scale morphological imaging.
S/TEM Image Analysis
Bright-field image from a transmission electron microscope
By transmitting a high-energy electron beam through the sample and focusing it into an image using an electron-optical lens, it is possible to observe the sample’s internal microstructure.
STEM Bright-Field Imaging
By employing a ring‑shaped detector, it collects both the direct electrons and the low‑angle elastic scattering electrons that pass through the sample, while filtering out the high‑angle scattered electrons, thereby complementing HAADF.
STEM dark-field imaging
Collecting high-angle scattered electrons to generate images allows for the intuitive visualization of atomic number differences, enabling observation at the single-atom level.
FinFET Analysis
TEM image
EDS mapping
STEM HAADF image
C map
To the map
Cl map
Hf map
W map
Ge map
Your map
N map
The map
If map
elements all map
EDS line-scan
In the Talos F200E, TEM/EDS analysis achieves perfect correspondence between the target structure and its composition—truly “what you see is what you get.”
High-resolution TEM/EDS analysis
In the TALOS F200E, the final structural and compositional results from TEM/EDS analysis are in perfect agreement, truly delivering “what you see is what you get.”
3D V-NAND Flash Analysis
The defining feature of 3D NAND is its high aspect-ratio structure, achieved by stacking dozens or even hundreds of layers of device cells. The resulting TEM samples typically present a “cross-section” that encompasses the entire stack, with pronounced thickness differences between adjacent layers.
LED Epitaxial Structure Analysis
LED epitaxial structures—such as GaN-based blue LEDs and Micro-LEDs—are highly sensitive to interface quality, material purity, defect density, and compositional fluctuations; the F200E is precisely the tool designed to address these challenges.
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Microstructural Analysis (Lattice Imaging)
Crystal Defects and Lattice Defects (Dislocation) Analysis
Elemental Composition Analysis
Thin-Film Stress Analysis
Electron Diffraction Pattern Analysis
Impurity and Contaminant Source Analysis
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Image
TEM information limit ≤0.12 nm
TEM line resolution ≤0.1nm
STEM resolution ≤0.16nmEDS
Detector: 4 SDD
Solid angle: 0.9Other features
Piezo stage+DCFI
4K×4K CCD
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HRTEM Mode: Atomic resolution , intuitively displays the lattice, atomic arrangement, and crystal structure
STEM (HAADF): Z- Contrast , easy to interpret, suitable for coupling with EDS/EELS, atomic number contrast, three-dimensional structure
Bright/Dark Field Image: Sensitive to crystal defects, such as dislocations, grain boundaries, and precipitate phases.
NBED ： Nanoscale diffraction, crystal structure of a tiny region
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