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Service Offerings
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Validation Analysis
Dual-Beam Focused Ion Beam (FIB)
- Detailed description
- Case Study Sharing
- Scope of application
- Equipment Specifications
- TEM Sample Preparation Techniques
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- Commodity name: Dual-Beam Focused Ion Beam (FIB)
Commonly abbreviated as FIB-SEM , is a method that transforms Focused Ion Beam And Scanning Electron Microscope Advanced instruments integrated into a single device.
Focused Ion Beam
Outstanding FIB performance, featuring a Gaussian gallium ion source, enables nanometer-scale precision in processing and ultra-thin sectioning (<5 nm), making it ideal for the most delicate sample preparation and cutting tasks in semiconductors, advanced devices, and other high-precision applications.
Scanning electron beam
The Helios 5UX is equipped with Thermo Fisher's state-of-the-art Elite-type electron column, enabling ultra-high-resolution SEM imaging with exceptional spatial resolution—up to 0.6 nm at 1 kV and 0.9 nm at 500 V under optimal conditions—allowing clear visualization of nanoscale surface topography and structural details.
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Cross-sectional Analysis
The Helios 5UX enables clear observation of nanoparticles, crystal structures, atomic-level defects, and more. It delivers exceptionally stable, low-noise images, making it particularly well-suited for long-term, repetitive observations and measurements.
EDS Analysis
Helios 5 UX's high-resolution SEM imaging capability ensures that EDS analysis is pinpoint-accurate.
Chip Failure Analysis
The Helios 5 UX ion beam system boasts exceptional performance, enabling ultra-precise cutting—also known as "nano-etching."
Copper Grain Analysis
Helios 5 UX ion beam imaging delivers sharp results—when the ion beam is directed onto the polished copper surface, it makes the copper grain boundaries even more distinct.
TEM Sample Preparation
Helios 5 UX enables final polishing using an ion beam with low voltage and low current, effectively removing the surface amorphous damage layer introduced during earlier processing, thus achieving atomically smooth and ultra-clean thin regions.
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Semiconductor Component Failure Analysis
Semiconductor Production Line Process Anomaly Analysis
Thin-Film Structure Analysis
Transmission Electron Microscopy Specimen Preparation
Cross-Section Composition Analysis
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Imagery
Point Resolution: 0.1 nm
STEM Resolution: 0.16 nmEDS
Detector: 4 SDD
Solid angle: 0.9Other features
Piezo stage + DCFI
4K×4K CCD
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Cross-sectional sample
When advancing the pinpoint failure analysis to identify anomalies, it was found that TEM sample preparation can be performed directly on the identified anomalies for subsequent TEM analysis.
Plan-view Sample
Planar samples and cross-sectional samples complement each other, addressing different dimensions of material characterization respectively. They enable the intuitive and precise identification and localization of anomalous regions within the plane.
Plan-view to Cross-sectional Sample
Based on precise planar positioning, perform sectional analysis—transforming planar anomaly displays into sectional anomaly representations, and presenting anomalies in a three-dimensional manner across different dimensions.
Reverse cut
If the water curtain effect caused by standard section preparation in special samples interferes with the observation of the target area, reverse-sectioning is chosen for sample preparation.
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