Validation Analysis
Dual Beam Focused Ion Beam (Dual Beam FIB)
- Detailed description
- Case Study Sharing
- Scope of application
- Equipment Specifications
- TEM Sample Preparation Techniques
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- Commodity name: Dual Beam Focused Ion Beam (Dual Beam FIB)
Usually abbreviated as FIB-SEM , is a method that will Focused Ion Beam and Scanning electron microscope Advanced instruments integrated into a single device.
Focused Ion Beam
Outstanding FIB performance, featuring a gallium ion source, nanoscale machining capabilities, and the ability to produce ultra-thin sections (<5 nm), making it ideally suited for the most precise sample preparation and cutting in semiconductor and advanced device applications.
Scanning electron beam
Ultra-high-resolution SEM imaging: The Helios 5UX is equipped with Thermo Fisher’s state-of-the-art Elite electron column, delivering exceptionally high spatial resolution—up to 0.6 nm at 1 kV and 0.9 nm at 500 V under optimal conditions—enabling clear visualization of nanoscale surface topography and structural details.
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Cross-sectional analysis
The Helios 5UX enables clear visualization of nanoparticles, crystalline structures, atomic‑scale defects, and more. It delivers exceptionally stable, low‑noise images, making it ideally suited for long‑term, repetitive observations and measurements.
EDS analysis
The high-resolution SEM imaging capability of the Helios 5 UX ensures extremely precise localization for EDS analysis.
Failure Analysis of Chips
The Helios 5 UX’s ion beam system delivers exceptional performance, enabling ultra-precise cutting—also known as “nano‑engraving.”
Copper Grain Analysis
Helios 5 UX ion-beam imaging delivers high resolution, and irradiation of the ground copper surface with the ion beam makes the copper grain boundaries more distinct.
TEM Sample Preparation
Helios 5 UX enables final polishing with a low‑voltage, low‑beam‑current ion beam, effectively removing the surface amorphous damage layer introduced during prior processing and yielding an atomically smooth, clean thin region.
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Failure Analysis of Semiconductor Components
Semiconductor Production Line Process Anomaly Analysis
Membrane Structure Analysis
Preparation of Transmission Electron Microscopy Specimens
Cross-sectional composition analysis
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Image
Point Resolution: 0.1nm
STEM Resolution: 0.16nmEDS
Detector: 4 SDD
Solid angle: 0.9Other features
Piezo stage+DCFI
4K×4K CCD
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Cross-sectional sample
During the implementation of Fixed-Point Failure Analysis, when an anomaly is detected, TEM sample preparation can be performed directly for TEM analysis.
Plan-view sample
Planar samples and cross-sectional samples complement each other, addressing different dimensional aspects of material characterization. They enable the direct and precise identification and localization of anomalous regions within a given plane.
Plan-view to Cross-sectional Sample
Based on precise planar positioning, cross-sectional analysis is performed, transforming planar anomaly visualization into three-dimensional cross-sectional representation, thereby presenting anomalies in a multidimensional, stereoscopic manner.
Reverse cut
When the water‑film effect generated during standard cross‑section preparation in special samples interferes with the observation of the target region, an inverted‑cutting technique is employed for sample preparation.
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