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Validation Analysis
Non-Volatile Memory Reliability Testing (NVRAM)
- Detailed description
- Case Study Sharing
- Scope of application
- Equipment Specifications
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- Commodity name: Non-Volatile Memory Reliability Testing (NVRAM)
Cycling Endurance Test: Non-volatile memory components are subjected to a fixed number of Erase/Program cycles, both at high temperature and room temperature, to evaluate the component's durability under repeated write-and-erase operations.
Data Retention Test: After storing data in the non-volatile memory component, high-temperature accelerated baking is performed, followed by high-temperature and room-temperature readings of the data stored within the component. The purpose of this test is to evaluate the component's data retention capability.
Test Conditions
Failure Mode
Cycling Endurance Test
Unable to reach the erase/write cycle count defined in the non-volatile memory component specification.
Unable to perform erase or write operations within the erase/write cycle count defined in the specification for this non-volatile memory component.
Data Retention Test
The specified data retention time defined in the non-volatile memory component datasheet cannot be achieved.
Data storage errors caused by charge leakage, capacitive coupling failure, and other similar reasons.
Service Advantages
We can assist customers in editing Flash test patterns, and also provide editing services for HTOL/ELFR test patterns.
Reference Specifications
JESD 47 / JESD22-A117 / JESD22-A103 / JESD22-A108 / AEC-Q Series
Applicable Fields
Automotive, consumer, commercial, industrial
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