Validation Analysis
High and Low Temperature Storage (H<SL)
- Detailed description
- Case Study Sharing
- Scope of application
- Equipment Specifications
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- Commodity name: High and Low Temperature Storage (H<SL)
H<SL (High/Low Temperature Storage Life) is an abbreviation for high-temperature and low-temperature testing. The purpose of these tests is to determine a product’s suitability for storage, transportation, and use under high‑ or low‑temperature environmental conditions. The severity of the test depends on the specific temperature levels and the duration of exposure.
Temperature measurement conditions
High‑temperature storage testing is typically used to determine how time and temperature, under storage conditions, influence thermally activated failure mechanisms and the failure‑time distribution of solid‑state electronic devices, including nonvolatile memory devices—i.e., data‑retention failure mechanisms. During this test, accelerated stress temperatures are applied while electrical stresses are not imposed. Low‑temperature storage testing, on the other hand, is generally employed to assess the effects of time and temperature on thermally activated failure mechanisms in solid‑state electronic devices, including nonvolatile memory devices (data‑retention failure mechanisms). In this case, reduced temperatures (test conditions) are used, with no electrical stress applied. Both tests may be destructive, depending on the duration, temperature, and package configuration (if a package is present).
High-temperature storage Low-temperature storage Common failure modes
Solder Joint Fatigue and Cracking
Interfacial Stress Distribution and Delamination Risk Zones in Multilayered Structures
Failure mode
Intermetallic Compound (IMC) Growth
In high-temperature environments, atoms at the interface between bonding wires (gold or copper) and aluminum pads undergo continuous interdiffusion, leading to the formation of an intermetallic compound (IMC). This represents the most fundamental physicochemical transformation in packaging interconnect structures during service and serves as a critical initiating factor for subsequent failures.
Kirkendall Voids
This is a microstructural defect arising from differences in atomic diffusion rates. When gold atoms diffuse into aluminum much more rapidly than aluminum atoms diffuse into gold, the interfacial lattice experiences a significant loss of atoms, leading to the formation of numerous vacancies; these vacancies subsequently aggregate to form critical microscopic voids.
Reference Standard
JESD22-A103
JESD22-A119Applicable Fields
Automotive, commercial, industrial, and consumer products
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IPHH-202M
Temperature range: 50°C to 300°CPVH-332M
Temperature range: 50°C to 300°CARS-0680
Temperature range: -75°C to 180°C
Humidity range: 10%RH to 98%RH
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